Quantitative Visualization of Thermally Enhanced Perpendicular Shape Anisotropy STT-MRAM Nanopillars.
Sign Up to like & getrecommendations! Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c00597
Abstract: Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque magnetoresistive random-access memory (STT-MRAM) beyond the sub-20 nm technology node while retaining thermal stability. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM… read more here.
Keywords: perpendicular shape; shape anisotropy; stt; stt mram ... See more keywords
Physicochemical origin of improvement of magnetic and transport properties of STT-MRAM cells using tungsten on FeCoB storage layer
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5081912
Abstract: We investigated and compared the structural and magnetic properties of MgO/FeCoB based out-of-plane magnetized tunnel junctions at the thin film level and the magneto-transport properties of the corresponding patterned spin transfer torque magnetic random access… read more here.
Keywords: transport properties; mram cells; stt mram; cap ... See more keywords
Cache performance of NV-STT-MRAM with scale effect and comparison with SRAM
Sign Up to like & getrecommendations! Published in 2021 at "International Journal of Electronics"
DOI: 10.1080/00207217.2021.1908630
Abstract: ABSTRACT Cache is the bridge between CPU and memory for data exchange, which consumes up to 45% of the entire CPU energy. Low power cache and memory are urgently required for the computer system. The… read more here.
Keywords: sram; cache; performance; stt mram ... See more keywords
Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3158493
Abstract: Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising emerging memory technology for on-chip caches. It has a low read access time and low leakage power. Unfortunately, however, STT-MRAM suffers from its long write… read more here.
Keywords: fast writes; mram; enable fast; writes stt ... See more keywords
STT-BNN: A Novel STT-MRAM In-Memory Computing Macro for Binary Neural Networks
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Journal on Emerging and Selected Topics in Circuits and Systems"
DOI: 10.1109/jetcas.2022.3169759
Abstract: This paper presents a novel architecture for in-memory computation of binary neural network (BNN) workloads based on STT-MRAM arrays. In the proposed architecture, BNN inputs are fed through bitlines, then, a BNN vector multiplication can… read more here.
Keywords: bnn; stt mram; stt bnn; bnn novel ... See more keywords
A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Journal of Solid-State Circuits"
DOI: 10.1109/jssc.2021.3112182
Abstract: The development of security-aware mobile devices using wide-input–output (IO) nonvolatile memory (NVM) is hindered by high peak current, large area overhead for high read bandwidth (BWR), and considerable energy consumption for data movement between NVM… read more here.
Keywords: mram macro; stt mram; security aware; near memory ... See more keywords
Mitigating and Tolerating Read Disturbance in STT-MRAM-Based Main Memory via Device and Architecture Innovations
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2018.2878166
Abstract: As an important nonvolatile memory technology, spin transfer torque magnetoresistive RAM (STT-MRAM) is widely considered as a universal memory solution for future processors. Employing STT-MRAM as the main memory offers a wide variety of benefits,… read more here.
Keywords: stt mram; main memory; memory; read disturbance ... See more keywords
STT-MRAM-Based Multicontext FPGA for Multithreading Computing Environment
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2021.3091440
Abstract: The demand for high-performance computing and rapidly increasing power consumption has increased the necessity for application-specific accelerators. In the datacenter and mobile system, more applications are increasingly relying on accelerators. Field-programmable gate arrays (FPGAs) emerge… read more here.
Keywords: nvmc fpga; stt mram; power; fpga ... See more keywords
Techniques to Improve Write and Retention Reliability of STT-MRAM Memory Subsystem
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2021.3118210
Abstract: Spin transfer torque magneto-resistive random-access memory (STT-MRAM) has many advantages, such as scalability, persistence, practically infinite endurance, and fast access speed, that make it a promising and emerging technology for memory. However, this technology has… read more here.
Keywords: stt mram; improve write; reliability; memory ... See more keywords
MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2021.3140157
Abstract: The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external… read more here.
Keywords: pmtj; stt mram; design; mtj model ... See more keywords
Time-Dependent Electromigration Modeling for Workload-Aware Design-Space Exploration in STT-MRAM
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2022.3158249
Abstract: Electromigration (EM) has been known as a reliability threatening factor for back-end-of-the-line interconnects. Spin-transfer torque magnetic RAM (STT-MRAM) is an emerging nonvolatile memory that has gained a lot of attention in recent years. However, relatively… read more here.
Keywords: time dependent; design; workload aware; stt mram ... See more keywords