LAUSR

Fully Programmable Redundancy Circuits for STT-MRAM

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1 Published in 2017 at "IEEE Transactions on Magnetics"

DOI: 10.1109/tmag.2017.2723476

Abstract: We propose fully programmable redundancy schemes for spin-transfer-torque magnetic random access memories (STT-MRAMs). To store redundancy information, these schemes use magnetic tunnel junctions (MTJs), which are core memory elements of STT-MRAMs. This can greatly simplify… read more here.

Keywords: circuits stt; redundancy circuits; fully programmable; redundancy ... See more keywords