Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)||Gr2||Co1/Ni3(1 1 1) structure as magnetic tunnel junction
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Magnetism and Magnetic Materials"
DOI: 10.1016/j.jmmm.2017.12.021
Abstract: Abstract The perpendicular anisotropy Spin-Transfer Torque Random Access Memory (P-STT-RAM) is considered to be a promising candidate for high-density memories. Many distinct advantages of Perpendicular Magnetic Tunnel Junction (P-MTJ) compared to the conventional in-plane MTJ… read more here.
Keywords: co1 ni3; technology; stt ram; technology node ... See more keywords
EXTENT: Enabling Approximation-Oriented Energy Efficient STT-RAM Write Circuit
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3194679
Abstract: Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations through… read more here.
Keywords: ram write; circuit; energy; approximation ... See more keywords
A Novel STT-RAM-Based Hybrid Cache for Intermittently Powered Processors in IoT Devices
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Micro"
DOI: 10.1109/mm.2018.2890257
Abstract: Emerging nonmemory technologies have been widely employed in intermittently powered the Internet of Things (IoT) devices to bridge program execution across different power cycles. Together with register contents, the cache contents will be checkpointed to… read more here.
Keywords: cache; access; memory; stt ram ... See more keywords
Persistent and Nonpersistent Error Optimization for STT-RAM Cell Design
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2016.2619484
Abstract: Rapidly increasing demands for memory capacity and severe technical scaling challenges of conventional memory technologies motivated recent investments on next-generation nonvolatile memory technologies. As a promising candidate, spin-transfer torque random access memory (STT-RAM) has demonstrated… read more here.
Keywords: ram cell; ram; stt ram; design ... See more keywords
A Compile-Time Framework for Tolerating Read Disturbance in STT-RAM
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2020.3023666
Abstract: Spin-transfer torque magnetic random access memory (STT-RAM) is one of the most promising candidates for next-generation on-chip memories. While STT-RAM offers high density, negligible leakage power, and fast access speed, it also suffers from read-disturbance… read more here.
Keywords: read disturbance; framework; stt ram; compile time ... See more keywords
Alternative Encoding: A Two-Step Transition Reduction Scheme for MLC STT-RAM Cache
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2021.3112638
Abstract: Although multiple-level-cell (MLC) STT-RAM increases data density, it suffers from the two-step transition (TT) issue. It is because hard domain and soft domain of an MLC STT-RAM cell cannot be flipped to the opposite magnetization… read more here.
Keywords: mlc stt; scheme; stt ram;
Performance and Energy-Efficient Design of STT-RAM Last-Level Cache
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2018.2804938
Abstract: Recent research has proposed having a die-stacked last-level cache (LLC) to overcome the memory wall. Lately, spin-transfer-torque random access memory (STT-RAM) caches have received attention, since they provide improved energy efficiency compared with DRAM caches.… read more here.
Keywords: energy; cache; performance; stt ram ... See more keywords