Morphological study of InGaN on GaN substrate by supersaturation
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DOI: 10.1016/j.jcrysgro.2018.12.028
Abstract: Abstract The morphology of thin InGaN layers grown on c-plane GaN substrates by metalorganic vapor phase epitaxy (MOVPE) has been studied by atomic force microscopy. Three different morphologies appeared, a stepped surface, large flat two-dimensional… read more here.
Keywords: morphological study; study ingan; supersaturation; gan substrate ... See more keywords