Study of silicon surface implanted by silver ions
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DOI: 10.1016/j.vacuum.2018.10.060
Abstract: Abstract Ag+-ion implantation of single-crystal c-Si at low-energy (E = 30 keV) high-doses (D = 1.25⋅1015–1.5⋅1017 ion/cm2) and current density (J = 2, 8, 15 μA/cm2) was carried out. The changes of Si surface morphology after ion implantation were studied by scanning electron… read more here.
Keywords: surface; ion; study silicon; ion cm2 ... See more keywords
A comparative study of silicon detector degradation under irradiation by heavy ions and relativistic protons
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Instrumentation"
DOI: 10.1088/1748-0221/13/01/p01019
Abstract: Silicon detectors irradiated by 40Ar ions with the energy of 1.62 GeV were studied with the goal to find the parameters of radiation damage induced by ions. The measurements of the I–V characteristics, temperature dependences… read more here.
Keywords: silicon detector; irradiation; study silicon; detector degradation ... See more keywords