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Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.10.030
Abstract: Abstract A correlation study between substrate and epitaxial wafer of 4H-N Silicon Carbide (SiC) is conducted on five aspects for the first time: thickness and doping concentration uniformity distribution, topography change, surface roughness and crystalline…
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Keywords:
epitaxial wafer;
study substrate;
substrate epitaxial;
correlation study ... See more keywords