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Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618010074
Abstract: An indium-phosphide InP sample subjected to the pore-generation procedure and then doped with S atoms is studied by the methods of X-ray diffraction analysis (XRD) and small-angle X-ray scattering (SAXS) (with CuKα1-radiation). The XRD data…
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Keywords:
sample;
indium phosphide;
ray study;
study superstructure ... See more keywords