Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2016.12.008
Abstract: Abstract A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14 nm) and symmetrical diffusive S/D contacts is presented with noteworthy demonstrations in both processing (layer engineering at nanoscale), and in… read more here.
Keywords: around field; transistors vertical; sub gate; effect transistors ... See more keywords
Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?
Sign Up to like & getrecommendations! Published in 2021 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.1c05229
Abstract: Single-walled carbon nanotubes (CNTs) have been considered as a promising semiconductor to construct transistors and integrated circuits in the future owing to their ultrathin channel thickness and ultrahigh injection velocity. Although a 5 nm gate-length… read more here.
Keywords: length; sub gate; gate length; performance ... See more keywords