Silver/(sub-10-nm)hafnium-oxide-based resistive switching devices on silicon: characteristics and switching mechanism.
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DOI: 10.1088/1361-6528/ab68fb
Abstract: This study investigates the resistive switching (RS) behavior of Ag/HfO2(3-nm-thick)/SiOx(interfacial-layer)/Si devices. The findings are drawn from a systematic electrical and material characterization of the fabricated devices. Based on the current-time(I-t)and current-voltage(I-V)measurements, it is inferred that… read more here.
Keywords: hafnium oxide; oxide based; silver sub; sub hafnium ... See more keywords