Substitutional p‐Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD
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DOI: 10.1002/adma.202209371
Abstract: Monolayer MoS2 has attracted significant attention owing to its excellent performance as an n‐type semiconductor from the transition metal dichalcogenide (TMDC) family. It is however strongly desired to develop controllable synthesis methods for 2D p‐type… read more here.
Keywords: mos2 lateral; nbs2 mos2; substitutional type; type doping ... See more keywords