Structural and nanomechanical properties of porous silicon: Cheap substrate for CMOS process industry
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DOI: 10.1002/sia.6885
Abstract: The surface topology of porous silicon (PSi) is a relevant parameter that decides the compatibility of such substrate with CMOS process. Using standard resistivity (1–10 Ω·cm) of Si substrate to fabricate PSi‐S is a low… read more here.
Keywords: substrate cmos; substrate; industry; process ... See more keywords