The Effect of Ultrasonic Agitation on the Seedless Growth of Cu on Ru-W Thin Films
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DOI: 10.3390/ma16010167
Abstract: Ru attracted considerable attention as a candidate to replace TaN as a diffusion barrier layer for Cu interconnect metallisation. The addition of W improves the diffusion barrier properties of Ru but appears to weaken the… read more here.
Keywords: substrate coverage; growth; thin films; ultrasonic agitation ... See more keywords