A correlation study of substrate and epitaxial wafer with 4H-N type silicon carbide
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DOI: 10.1016/j.jcrysgro.2018.10.030
Abstract: Abstract A correlation study between substrate and epitaxial wafer of 4H-N Silicon Carbide (SiC) is conducted on five aspects for the first time: thickness and doping concentration uniformity distribution, topography change, surface roughness and crystalline… read more here.
Keywords: epitaxial wafer; study substrate; substrate epitaxial; correlation study ... See more keywords