Suppression of optical field leakage to GaN substrate in GaN-based green laser diode
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DOI: 10.1016/j.spmi.2017.01.012
Abstract: Abstract In this study, n-InGaN and u-InGaN are proposed to be the lower waveguide (LWG) and quantum barrier (QB), respectively, to eliminate the leakage of optical field to GaN substrate in GaN-based green laser diode… read more here.
Keywords: optical field; based green; gan based; field ... See more keywords