Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology
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DOI: 10.1109/ted.2019.2896156
Abstract: Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity… read more here.
Keywords: substrate loss; dependent substrate; loss gan; loss ... See more keywords