Effects of substrate termination on R on increase under stress in 650 V GaN power devices
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DOI: 10.1088/1361-6463/abf44b
Abstract: Buffer related electron trapping and hot electron injection are responsible for R on degradation in devices, but the effects of substrate termination are still uncertain. In this work, both positive and negative substrate bias are… read more here.
Keywords: effects substrate; substrate termination; increase; electron ... See more keywords