Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs
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DOI: 10.1016/j.sse.2018.04.006
Abstract: Abstract We studied how substrate thinning affected the electronic transport characteristics of AlGaN/GaN HEMTs. By thinning their sapphire substrate from 460 µm to 80 µm, we varied the residual stress in these HEMTs. The thinned sample showed… read more here.
Keywords: substrate thinning; transport characteristics; algan gan; characteristics algan ... See more keywords