High-operating temperature InAsSb/AlSb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy
Sign Up to like & getrecommendations! Published in 2018 at "Optical Engineering"
DOI: 10.1117/1.oe.57.12.127104
Abstract: Abstract. InAsSb/AlSb barrier detectors were grown on (100) semi-insulating GaAs substrates by a molecular beam epitaxy. We compare the performance of two detectors with different active layers denoted as p + BppBpN + and p + Bpnn + . InAs0.81Sb0.19 absorber allows… read more here.
Keywords: detectors grown; inassb alsb; substrates molecular; gaas substrates ... See more keywords