Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy
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DOI: 10.1088/1674-1056/ac0525
Abstract: AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA-MBE). Room temperature negative differential resistance (NDR) was obtained under forward bias for the RTDs… read more here.
Keywords: substrates sapphire; sapphire substrates; freestanding gan; resonant tunneling ... See more keywords