Subthreshold Characteristic Analysis and Models for Tri-Gate SOI MOSFETs Using Substrate Bias Induced Effects
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DOI: 10.1109/tnano.2019.2906567
Abstract: This paper proposes the substrate bias voltage dependent subthreshold models of channel potential, threshold voltage, current, drain induced barrier lowering, and subthreshold swing for tri-gate silicon-on-insulator (SOI) MOSFETs (TG-MOSFETs). The substrate induced surface potential effect… read more here.
Keywords: soi mosfets; subthreshold characteristic; tri gate; substrate bias ... See more keywords