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Published in 2022 at "Nanotechnology"
DOI: 10.1088/1361-6528/ac7cf8
Abstract: In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for…
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Keywords:
field effect;
subthreshold slope;
decade;
tin sulfide ... See more keywords
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3
Published in 2023 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3262229
Abstract: In the present work, we have fabricated the bottom-gate top-contact configuration of the pentacene organic thin film transistors (OTFTs) using two different dielectric layers. The effect of scaling of poly(methyl methacrylate) (PMMA) and cross-linkable poly(4-vinyl…
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Keywords:
top contact;
pentacene organic;
organic thin;
subthreshold slope ... See more keywords