Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect.
Sign Up to like & getrecommendations! Published in 2021 at "Nano letters"
DOI: 10.1021/acs.nanolett.1c00378
Abstract: The subthreshold swing is the critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device… read more here.
Keywords: subthreshold swing; overcoming boltzmann; field; boltzmann tyranny ... See more keywords
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
Sign Up to like & getrecommendations! Published in 2020 at "Nano Letters"
DOI: 10.1021/acs.nanolett.9b05356
Abstract: Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by using… read more here.
Keywords: effect; subthreshold swing; negative capacitance; nanowire tunnel ... See more keywords
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
Sign Up to like & getrecommendations! Published in 2025 at "Applied Physics Letters"
DOI: 10.1063/5.0271394
Abstract: While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive analysis of the SS in… read more here.
Keywords: cryogenic temperatures; zinc oxide; indium gallium; gallium zinc ... See more keywords
High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H2 plasma and neutral oxygen beam irradiation treatment
Sign Up to like & getrecommendations! Published in 2023 at "Nanotechnology"
DOI: 10.1088/1361-6528/acb5f9
Abstract: In this work, staggered bottom-gate structure amorphous In–Ga–Zn–O (a-IGZO) thin film transistors (TFTs) with high-k ZrO2 gate dielectric were fabricated using low-cost atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) with in situ hydrogenation to modulate… read more here.
Keywords: neutral oxygen; low subthreshold; oxygen beam; subthreshold swing ... See more keywords
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2764873
Abstract: We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors (TFETs) by comparing the subthreshold swing and the conductance in the negative differential resistance region. This model is… read more here.
Keywords: subthreshold swing; tunnel field; band; tex math ... See more keywords
Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.2967773
Abstract: This work experimentally demonstrates the memory operations of a $\text{Z}^{{2}}$ -FET (Zero impact ionization, Zero subthreshold swing) matrix without the use of selectors. Selection and deselection of memory cells in the same bit line can… read more here.
Keywords: memory operations; zero subthreshold; ionization zero; subthreshold swing ... See more keywords
Steep Subthreshold Swing in GaN Negative Capacitance Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2934181
Abstract: Due to the Boltzmann distribution of carriers, the subthreshold swing (SS) of traditional metal–oxide–semiconductor field-effect transistors (MOSFETs) is above 60 mV/dec at room temperature. In this article, GaN-based negative capacitance field-effect transistors (NCFETs) were fabricated… read more here.
Keywords: field effect; effect transistors; subthreshold swing; negative capacitance ... See more keywords
Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3369576
Abstract: This work, for the first time, delves into and elucidates the underlying mechanism of subthreshold swing (SS) saturation in cryogenic InGaAs high electron mobility transistors (HEMTs). We proposed a pioneering interpretation of this phenomenon, grounded… read more here.
Keywords: ingaas; ingaas hemts; hemts cryogenic; channel ... See more keywords