A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications
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DOI: 10.1109/tie.2017.2703910
Abstract: The reduced chip size and unipolar current conduction mechanism make silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) suitable for high-frequency power electronics applications. Modeling the switching process of the SiC power MOSFET with parasitic components… read more here.
Keywords: high frequency; suitable high; power; power mosfet ... See more keywords