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Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2016.2647603
Abstract: In this letter, a novel super barrier rectifier with an N-enhancement layer (NEL-SBR) is proposed and experimentally demonstrated. Similar to, yet different from, the anti-JFET implantation technology for planar VDMOS, the NEL design equips this…
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Keywords:
barrier rectifier;
super barrier;
enhancement layer;