A 4H-SiC junction barrier Schottky diode with segregated floating trench and super junction
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.07.030
Abstract: Abstract A 4H-SiC Junction Barrier Schottky Diode with Segregated Floating Trench and Super Junction (S-FT SJ JBS) is presented in this paper. By adopting segregated integrated trench and super junction, the high electric field not… read more here.
Keywords: floating trench; super junction; diode; trench super ... See more keywords