P-Channel and N-Channel Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Ultralow Power CMOS
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DOI: 10.1109/jeds.2018.2876432
Abstract: In this paper, n-channel and p-channel super-steep subthreshold slope (SS) PN-body tied (PNBT) silicon on insulator field-effect transistors (SOI-FETs) are demonstrated. The PNBT structure has a symmetrical source and drain structure. The devices show super-steep… read more here.
Keywords: channel channel; super steep; steep subthreshold; channel ... See more keywords