Design and Simulation of GaN Superjunction Transistors With 2-DEG Channels and Fin Channels
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2019.2912978
Abstract: High-performance 2-D-electron-gas (2-DEG) channel and submicron fin-shaped channel have recently been demonstrated in vertical GaN power transistors. This indicates that, unlike Si and SiC, the inversion-type metal–oxide–semiconductor channel is no longer the “default option” for… read more here.
Keywords: tex math; inline formula; superjunction;
Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2782768
Abstract: The implementation of a “superjunction” collector design in a silicon–germanium heterojunction bipolar transistor technology is explored for enhancing breakdown performance. The superjunction collector is formed via the placement of a series of alternating the p/xn-doped… read more here.
Keywords: limiting effects; design vertical; superjunction collector; effects design ... See more keywords
Material Limit of Power Devices—Applied to Asymmetric 2-D Superjunction MOSFET
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2839180
Abstract: In spite of the reporting of several mathematical approaches dealing with the behavior of the superjunction MOSFET’s specific resistance, a study for the asymmetrical pillar (when the width of the n-pillar and the p-pillar are… read more here.
Keywords: power devices; superjunction mosfet; limit power; material limit ... See more keywords