Limiting Effects on the Design of Vertical Superjunction Collectors in SiGe HBTs
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DOI: 10.1109/ted.2017.2782768
Abstract: The implementation of a “superjunction” collector design in a silicon–germanium heterojunction bipolar transistor technology is explored for enhancing breakdown performance. The superjunction collector is formed via the placement of a series of alternating the p/xn-doped… read more here.
Keywords: limiting effects; design vertical; superjunction collector; effects design ... See more keywords