Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD
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DOI: 10.1049/el.2020.1076
Abstract: The lateral diffusion length ( L h ) of minority carriers in LWIR InAs/GaSb superlattice detectors grown by metalorganic chemical vapour deposition was evaluated. The deeply-etched PNn device exhibits a diffusion-limited behaviour at 80 K,… read more here.
Keywords: superlattice detectors; diffusion; inas gasb; gasb superlattice ... See more keywords