A 20.5-dBm $X$ -Band Power Amplifier With a 1.2-V Supply in 65-nm CMOS Technology
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DOI: 10.1109/lmwc.2018.2885305
Abstract: In this letter, we present an X-band power amplifier (PA) which achieves a saturated output power ( $P_{\mathrm {sat}}$ ) of 20.5 dBm under a 1.2-V supply in 65-nm CMOS. Considering the relatively low breakdown… read more here.
Keywords: power amplifier; power; band power; band ... See more keywords