Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3034898
Abstract: A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the… read more here.
Keywords: switching characteristics; buffer insulated; gate; surface buffer ... See more keywords
In Situ Study on Oxygen Etching of Surface Buffer Layer on SiC(0001) Terraces
Sign Up to like & getrecommendations! Published in 2017 at "E-journal of Surface Science and Nanotechnology"
DOI: 10.1380/ejssnt.2017.13
Abstract: Thermal decomposition of SiC has been used for the fabrication of high quality monolayer graphene and graphene nanoribbons on semi-insulating substrates. In this work, we propose a selective oxygen etching method to remove buffer layers… read more here.
Keywords: surface buffer; oxygen; buffer layer; microscopy ... See more keywords