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Published in 2017 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2017.07.195
Abstract: Abstract III-N surface polarization compensating charge referred here to as ‘surface donors’ (SD) was analyzed in Al 2 O 3 /AlGaN/GaN metal-oxide-semiconductor (MOS) heterojunctions using scaled oxide films grown by metal-organic chemical vapor deposition at…
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Keywords:
surface;
algan gan;
metal oxide;
chemical ... See more keywords