Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Luminescence"
DOI: 10.1016/j.jlumin.2019.116870
Abstract: Abstract In(Ga)As surface quantum dots (SQDs) are promising candidates for surface-sensitive detection applications. As such, studies of the carrier dynamics are indispensable when attempting to understand both the physics and the device performances based on… read more here.
Keywords: surface; carrier; carrier transfer; surface quantum ... See more keywords
Passivation capping of InAs surface quantum dots by TMA/Al2O3: PL enhancement and blueshift suppression
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0140035
Abstract: Passivation capping that enhances the photoluminescence (PL) of molecular beam epitaxy (MBE)-grown InAs surface quantum dots (SQDs) is realized by ex situ low-temperature atomic layer deposition (ALD)-grown Al2O3. As the Al2O3 cap thickness increased from… read more here.
Keywords: passivation capping; microscopy; surface quantum; passivation ... See more keywords