Role of surface recombination in perovskite solar cells at the interface of HTL/CH3NH3PbI3
Sign Up to like & getrecommendations! Published in 2020 at "Nano Energy"
DOI: 10.1016/j.nanoen.2019.104186
Abstract: In order to achieve the highest performance of organometal trihalide perovskite solar cells, it is required to recognize the dominant mechanisms which play a key role in a perovskite material. In the following studies, we… read more here.
Keywords: perovskite solar; layer; role; surface recombination ... See more keywords
On the recombination order of surface recombination under open circuit conditions
Sign Up to like & getrecommendations! Published in 2020 at "Organic Electronics"
DOI: 10.1016/j.orgel.2020.105905
Abstract: Abstract Understanding the recombination dynamics of organic and perovskite solar cells has been a crucial prerequisite in the steadily increasing performance of these promising new types of photovoltaics. Surface recombination in particular has turned out… read more here.
Keywords: open circuit; recombination; recombination order; surface recombination ... See more keywords
Rear contact silicon solar cells with a-SiCX:H based front surface passivation for near-ultraviolet radiation stability
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.08.016
Abstract: Abstract Surface recombination (due to dangling bonds) and lower absorption (due to the low absorption coefficient of silicon (Si)) are the major hindrances in silicon-based photovoltaic (PV) devices. To overcome this, numerous complex texturing schemes… read more here.
Keywords: passivation; rear contact; surface; surface recombination ... See more keywords
Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching
Sign Up to like & getrecommendations! Published in 2018 at "ACS Applied Energy Materials"
DOI: 10.1021/acsaem.8b00493
Abstract: High-density silicon nanowires (SiNWs) were fabricated on p-Si substrates by metal-assisted chemical etching (MACE). A chemical cleaning with HF/piranha/HF was used to remove structural defects from the nanowire surface which are at the origin of… read more here.
Keywords: silicon nanowires; metal assisted; surface; chemical ... See more keywords
Comment on “Enhanced Charge Selectivity via Anodic-C60 Layer Reduces Nonradiative Losses in Organic Solar Cells”
Sign Up to like & getrecommendations! Published in 2022 at "ACS Applied Materials & Interfaces"
DOI: 10.1021/acsami.1c05333
Abstract: Understanding interface-related phenomena is important for improving the performance of thin-film solar cells. In ACS Appl. Mater. Interfaces2021, 13, 12603–12609, Pranav et al. report that incorporating a thin C60 interlayer at the MoO3 anode results… read more here.
Keywords: c60; built voltage; comment enhanced; surface recombination ... See more keywords
Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells
Sign Up to like & getrecommendations! Published in 2017 at "ACS energy letters"
DOI: 10.1021/acsenergylett.6b00719
Abstract: Thin-film solar cells suffer from various types of recombination, of which leakage current usually dominates at lower voltages. Herein, we demonstrate first a three-order reduction of the shunt loss mechanism in planar methylammonium lead iodide… read more here.
Keywords: perovskite solar; leakage; surface recombination; recombination ... See more keywords
Bulk and surface recombination properties in thin film semiconductors with different surface treatments from time-resolved photoluminescence measurements
Sign Up to like & getrecommendations! Published in 2019 at "Scientific Reports"
DOI: 10.1038/s41598-019-41716-x
Abstract: The knowledge of minority carrier lifetime of a semiconductor is important for the assessment of its quality and design of electronic devices. Time-resolved photoluminescence (TRPL) measurements offer the possibility to extract effective lifetimes in the… read more here.
Keywords: surface; time resolved; surface recombination; photoluminescence ... See more keywords
Surface recombination velocity imaging of wet-cleaned silicon wafers using quantitative heterodyne lock-in carrierography
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5003260
Abstract: InGaAs-camera based heterodyne lock-in carrierography (HeLIC) is developed for surface recombination velocity (SRV) imaging characterization of bare (oxide-free) hydrogen passivated Si wafer surfaces. Samples prepared using four different hydrofluoric special-solution etching conditions were tested, and… read more here.
Keywords: recombination velocity; surface; lock carrierography; heterodyne lock ... See more keywords
Effects of surface recombination on the charge collection in h-BN neutron detectors
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Applied Physics"
DOI: 10.1063/1.5089138
Abstract: Hexagonal boron nitride (h-BN) epilayers have been recognized as a promising material for applications in solid-state neutron detectors. However, the highest detection efficiency of 58% attained so far for 1 mm2 detectors fabricated from 50 μm thick… read more here.
Keywords: efficiency; charge; charge collection; surface recombination ... See more keywords
Determination of Surface Recombination Velocity From Current–Voltage Characteristics in SiC p-n Diodes
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2867545
Abstract: Surface recombination velocity on mesa sidewalls of SiC p-n diodes with various surface passivation conditions was evaluated from the device-size-dependent preexponential factor of recombination current ( ${J}_{\text {0rec}}$ ). The diodes passivated by SiO2 with… read more here.
Keywords: recombination; recombination velocity; inline formula; surface recombination ... See more keywords
Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2020.3004710
Abstract: The p-n-p bipolar junction transistors (BJTs) are susceptible to surface recombination in both the emitter-base depletion and neutral base (NB) regions when their passivation oxide layers are damaged by ionization irradiation, leading to an increase… read more here.
Keywords: bjts; excess base; model; base current ... See more keywords