Sign Up to like & get
recommendations!
1
Published in 2023 at "Recent patents on nanotechnology"
DOI: 10.2174/1872210517666230427163447
Abstract: INTRODUCTION The Cylindrical Surrounding Double-Gate MOSFET has been designed using Aluminium Gallium Arsenide in its arbitrary alloy form alongside Indium Phosphide with Lanthanum Dioxide as a high-ƙ dielectric material. METHOD The heterostructure based on the…
read more here.
Keywords:
surrounding double;
cylindrical surrounding;
mosfet;
alxga1 xas ... See more keywords