Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1141-9
Abstract: A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to… read more here.
Keywords: surrounding gate; continuous semianalytical; vertical surrounding; tunnel ... See more keywords
Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET for improved gate leakages, analysis of circuit and noise performance
Sign Up to like & getrecommendations! Published in 2019 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2019.152924
Abstract: Abstract The leakages in off state, particularly Gate Induced Drain Leakage (GIDL) has been addressed and reduced by proposing a Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET. The shallow extensions create an insulating… read more here.
Keywords: surrounding gate; mosfet; noise; see mosfet ... See more keywords
New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor
Sign Up to like & getrecommendations! Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.05.016
Abstract: Abstract An accurate two dimensional subthreshold modeling of Germanium based Dual Halo Gate stacked Triple Material Surrounding Gate (Ge-DH-GS-TM-SG) tunnel field effect transistor is proposed for the first time in this paper. The model is… read more here.
Keywords: triple material; material surrounding; halo; surrounding gate ... See more keywords
An analytical model for terahertz detection in cylindrical surrounding-gate MOSFETs
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DOI: 10.1063/1.5043450
Abstract: An analytical model for detection of terahertz radiation by plasma wave in cylindrical surrounding-gate (SRG) MOSFETs is presented. In comparison with traditional drain-current models, the rectification response of terahertz signal due to current self-mixing in… read more here.
Keywords: analytical model; detection; surrounding gate; model ... See more keywords
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3021996
Abstract: We have demonstrated, for the first time, a surrounding gate vertical-channel field-effect transistor (FET) with a gate length of 40 nm by introducing back-end-of-line (BEOL) process-compatible oxide semiconductor (OS) In-Al-Zn-O as a channel material. Fabricated… read more here.
Keywords: fet; vertical channel; gate vertical; surrounding gate ... See more keywords