Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1141-9
Abstract: A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to… read more here.
Keywords: surrounding gate; continuous semianalytical; vertical surrounding; tunnel ... See more keywords
Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET for improved gate leakages, analysis of circuit and noise performance
Sign Up to like & getrecommendations! Published in 2019 at "AEU - International Journal of Electronics and Communications"
DOI: 10.1016/j.aeue.2019.152924
Abstract: Abstract The leakages in off state, particularly Gate Induced Drain Leakage (GIDL) has been addressed and reduced by proposing a Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET. The shallow extensions create an insulating… read more here.
Keywords: surrounding gate; mosfet; noise; see mosfet ... See more keywords
New subthreshold performance analysis of germanium based dual halo gate stacked triple material surrounding gate tunnel field effect transistor
Sign Up to like & getrecommendations! Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.05.016
Abstract: Abstract An accurate two dimensional subthreshold modeling of Germanium based Dual Halo Gate stacked Triple Material Surrounding Gate (Ge-DH-GS-TM-SG) tunnel field effect transistor is proposed for the first time in this paper. The model is… read more here.
Keywords: triple material; material surrounding; halo; surrounding gate ... See more keywords
An analytical model for terahertz detection in cylindrical surrounding-gate MOSFETs
Sign Up to like & getrecommendations! Published in 2018 at "AIP Advances"
DOI: 10.1063/1.5043450
Abstract: An analytical model for detection of terahertz radiation by plasma wave in cylindrical surrounding-gate (SRG) MOSFETs is presented. In comparison with traditional drain-current models, the rectification response of terahertz signal due to current self-mixing in… read more here.
Keywords: analytical model; detection; surrounding gate; model ... See more keywords
Vertical Surrounding Gate Transistor for High Density and Low Voltage Operation in DRAM
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DOI: 10.1109/access.2024.3382932
Abstract: In this article, a honeycomb vertical surrounding gate access transistor array scheme is proposed to further decrease the DRAM cell area with aggressively shrink bit line (BL) pitch and word line (WL) pitch adopting the… read more here.
Keywords: transistor; surrounding gate; tex math; inline formula ... See more keywords
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3021996
Abstract: We have demonstrated, for the first time, a surrounding gate vertical-channel field-effect transistor (FET) with a gate length of 40 nm by introducing back-end-of-line (BEOL) process-compatible oxide semiconductor (OS) In-Al-Zn-O as a channel material. Fabricated… read more here.
Keywords: fet; vertical channel; gate vertical; surrounding gate ... See more keywords