On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5117829
Abstract: In 4H silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), slow drain current transients and strong sweep hysteresis govern the subthreshold regime, in particular, after negative gate stress. Although these are clearly charge carrier trapping and… read more here.
Keywords: sweep hysteresis; time; gate; current transients ... See more keywords