Effect of Ag doping on bipolar switching operation in molybdenum trioxide (MoO3) nanostructures for non-volatile memory
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2020.158035
Abstract: Abstract As an emerging technology, nanoscale non-volatile memory technology can be used for in-memory computing and neuromorphic computing. However, the deeper understanding of the charge transport and resistive switching mechanism in memristor devices are still… read more here.
Keywords: non volatile; volatile memory; switching operation; switching ... See more keywords
Efficient Electrocatalytic Switching of Azoheteroarenes in the Condensed Phases.
Sign Up to like & getrecommendations! Published in 2021 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.1c06359
Abstract: Azo-based photoswitches have shown promise as molecular solar-thermal (MOST) materials due to their ability to store energy in their metastable Z isomeric form. The energy is then released, in the form of heat, upon photoisomerization… read more here.
Keywords: phase; energy; electrocatalytic switching; efficient electrocatalytic ... See more keywords
Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping
Sign Up to like & getrecommendations! Published in 2017 at "RSC Advances"
DOI: 10.1039/c7ra07100k
Abstract: Pr3+/Cd2+ co-doped ZnO hexagonal structure thin films with c-axis preferred orientation were deposited on Pt/Ti/SiO2/Si substrates using a chemical solution deposition method, and the effect of Cd-ion doping on the resistive switching properties of Zn0.97−xPr0.03CdxO… read more here.
Keywords: thin films; ion doping; switching properties; switching ... See more keywords
Ag-NPs doping enhanced resistive switching performance and induced changes in magnetic properties of NiFe2O4 thin films
Sign Up to like & getrecommendations! Published in 2017 at "RSC Advances"
DOI: 10.1039/c7ra08756j
Abstract: Ag-NPs doped NiFe2O4 (NFO) thin films have been synthesized by the chemical solution deposition method. The effect of Ag-NPs incorporation on the resistive switching (RS) properties of NFO films with different doping concentrations in the… read more here.
Keywords: nps doped; thin films; induced changes; nps doping ... See more keywords
Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.5008650
Abstract: A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The… read more here.
Keywords: reversible resistive; destructive reversible; non destructive; doped mott ... See more keywords
Stochastic resistive switching in memristors as physically unclonable functions
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Physics D: Applied Physics"
DOI: 10.1088/1361-6463/ae09b8
Abstract: Memristors are promising candidates for generating physically unclonable functions (PUFs) due to their inherently stochastic resistive switching behaviors. In memristive devices, conducting paths are formed via charge trapping, ion migration, or filamentary conduction mechanisms across… read more here.
Keywords: unclonable functions; stochastic resistive; switching; physically unclonable ... See more keywords
Modified Modulation Strategy With Balanced Power and Switching Losses Distributed for Seven-Level Cascaded H-Bridge Inverters
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Access"
DOI: 10.1109/access.2019.2941375
Abstract: In this paper, the problems existing in common modulation methods are analyzed, and an optimized modulation strategy is proposed. Firstly, the single-pole frequency doubling modulation technique is adopted to reduce the maximum switching frequency to… read more here.
Keywords: frequency; modulation; power; modulation strategy ... See more keywords
Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2742578
Abstract: Resistive-switching random access memory (RRAM) is widely considered as a disruptive technology. Despite tremendous efforts in theoretical modeling and physical analysis, details of how the conductive filament (CF) in metal-oxide-based filamentary RRAM devices is modified… read more here.
Keywords: random telegraph; conductive filament; switching; resistive switching ... See more keywords
Interconversion Between Bipolar and Complementary Behavior in Nanoscale Resistive Switching Devices
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2882652
Abstract: In the study of resistive random access memory using GeTeOx film as the switching layer, the device performed excellent property of bipolar resistive switching (BRS), which could be gradually transformed to the complementary resistive switching… read more here.
Keywords: devices interconversion; resistive switching; interconversion bipolar; bipolar complementary ... See more keywords
Degradation of Nonhysteretic Switching in HZO–Al2O3 Stacks Due to Positive Unipolar Stress
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3344409
Abstract: The presented measurement procedure in (Engl et al., 2023) is used to characterize the degradation of the hysteresis-free charge amplification in unipolar operation of stabilized negative capacitance capacitors. Two degradation processes, namely, remanent switching of… read more here.
Keywords: switching; hzo al2o3; degradation; degradation nonhysteretic ... See more keywords
IGCT Low-Current Switching—TCAD and Experimental Characterization
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2019.2939996
Abstract: Utilization of the integrated gate-commutated thyristor as a semiconductor switch in the series resonant converter for isolated medium-voltage dc–dc conversion offers an opportunity for high conversion efficiency while operating at the high switching frequency. Low… read more here.
Keywords: current switching; low current; switching tcad; tcad experimental ... See more keywords