Articles with "switching behaviour" as a keyword



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Structural and resistive switching behaviour in lanthanum strontium manganite - Reduced graphene oxide nanocomposite system

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Published in 2020 at "Journal of Alloys and Compounds"

DOI: 10.1016/j.jallcom.2019.152213

Abstract: Abstract Nanocomposite made of La0.7Sr0.3MnO3 (LSMO) and reduced graphene oxide (rGO) is a promising candidate for non-volatile memory application in oxide electronics. Here, we report bipolar resistive switching (RS) behaviour in (1-x)LSMO.(x)rGO nanocomposite system, for… read more here.

Keywords: graphene oxide; switching behaviour; behaviour; reduced graphene ... See more keywords
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Temperature-dependent resistive switching behaviour of an oxide memristor

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Published in 2021 at "Materials Letters"

DOI: 10.1016/j.matlet.2021.130451

Abstract: Abstract In this work, we report the temperature-dependent transport and resistive switching behaviour of a promising hybrid structure made of La0.7Ca0.3MnO3 (LCMO) and reduced graphene oxide (rGO). The current-voltage (IV) characteristics are non-linear across the… read more here.

Keywords: dependent resistive; switching behaviour; resistive switching; temperature ... See more keywords

Electrical switching behaviour of a metalloporphyrin in Langmuir-Blodgett film

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Published in 2017 at "Organic Electronics"

DOI: 10.1016/j.orgel.2017.12.038

Abstract: Abstract Here we report the resistive switching behaviour of an water soluble anionic metalloporphyrin 5,10,15,20-Tetrakis(4-sulfonatophenyl)-21H,23H-porphine manganese(III) chloride (MnTPPS) assembled onto spin coated as well as in Langmuir-Blodgett (LB) film. To prepare LB film, water soluble… read more here.

Keywords: switching behaviour; metalloporphyrin; langmuir blodgett; blodgett film ... See more keywords
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Effects of annealing temperature on the resistance switching behaviour of solution-processed ZnO thin films

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Published in 2020 at "Superlattices and Microstructures"

DOI: 10.1016/j.spmi.2020.106718

Abstract: Abstract In this study, the resistance switching (RS) behaviour of the fabricated devices with the configuration: ITO/ZnO (x annealing temperature)/Al were investigated. It was observed that the area of a hysteresis loop in the Current-Voltage… read more here.

Keywords: switching behaviour; resistance switching; zno; annealing temperature ... See more keywords
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Reversible resistive switching behaviour in CVD grown, large area MoOx.

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Published in 2018 at "Nanoscale"

DOI: 10.1039/c8nr04407d

Abstract: Non-volatile resistive memory devices are theorized to be the most promising pathway towards analog memory and neuromorphic computing. Two-dimensional MoO3 is a versatile planar transition metal oxide, whose properties can be readily tuned, making it… read more here.

Keywords: switching behaviour; reversible resistive; resistive switching; resistive memory ... See more keywords
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Resistive switching behaviour in a polymannose film for multistate non-volatile memory application

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Published in 2020 at "Journal of Materials Chemistry C"

DOI: 10.1039/d0tc04655h

Abstract: With the shift towards reducing electronic waste, bio-organic materials are considered as prominent alternatives to produce resistive switching memory due to their biodegradability and benign environmental impacts. read more here.

Keywords: switching behaviour; resistive switching; film multistate; behaviour polymannose ... See more keywords
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Does Brand Personality and Perceived Product Quality Play a Major Role in Mobile Phone Consumers’ Switching Behaviour?

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Published in 2017 at "Global Business Review"

DOI: 10.1177/0972150917693155

Abstract: This study’s main objective is to explore the antecedents of consumer switching behaviour in the context of mobile industry. At the same time, this study gives a closer focus on the roles that brand personality… read more here.

Keywords: switching behaviour; perceived product; product quality; brand ... See more keywords