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Published in 2020 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2019.152213
Abstract: Abstract Nanocomposite made of La0.7Sr0.3MnO3 (LSMO) and reduced graphene oxide (rGO) is a promising candidate for non-volatile memory application in oxide electronics. Here, we report bipolar resistive switching (RS) behaviour in (1-x)LSMO.(x)rGO nanocomposite system, for…
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Keywords:
graphene oxide;
switching behaviour;
behaviour;
reduced graphene ... See more keywords
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Published in 2021 at "Materials Letters"
DOI: 10.1016/j.matlet.2021.130451
Abstract: Abstract In this work, we report the temperature-dependent transport and resistive switching behaviour of a promising hybrid structure made of La0.7Ca0.3MnO3 (LCMO) and reduced graphene oxide (rGO). The current-voltage (IV) characteristics are non-linear across the…
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Keywords:
dependent resistive;
switching behaviour;
resistive switching;
temperature ... See more keywords
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Published in 2017 at "Organic Electronics"
DOI: 10.1016/j.orgel.2017.12.038
Abstract: Abstract Here we report the resistive switching behaviour of an water soluble anionic metalloporphyrin 5,10,15,20-Tetrakis(4-sulfonatophenyl)-21H,23H-porphine manganese(III) chloride (MnTPPS) assembled onto spin coated as well as in Langmuir-Blodgett (LB) film. To prepare LB film, water soluble…
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Keywords:
switching behaviour;
metalloporphyrin;
langmuir blodgett;
blodgett film ... See more keywords
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Published in 2020 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2020.106718
Abstract: Abstract In this study, the resistance switching (RS) behaviour of the fabricated devices with the configuration: ITO/ZnO (x annealing temperature)/Al were investigated. It was observed that the area of a hysteresis loop in the Current-Voltage…
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Keywords:
switching behaviour;
resistance switching;
zno;
annealing temperature ... See more keywords
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Published in 2018 at "Nanoscale"
DOI: 10.1039/c8nr04407d
Abstract: Non-volatile resistive memory devices are theorized to be the most promising pathway towards analog memory and neuromorphic computing. Two-dimensional MoO3 is a versatile planar transition metal oxide, whose properties can be readily tuned, making it…
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Keywords:
switching behaviour;
reversible resistive;
resistive switching;
resistive memory ... See more keywords
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Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc04655h
Abstract: With the shift towards reducing electronic waste, bio-organic materials are considered as prominent alternatives to produce resistive switching memory due to their biodegradability and benign environmental impacts.
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Keywords:
switching behaviour;
resistive switching;
film multistate;
behaviour polymannose ... See more keywords
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Published in 2017 at "Global Business Review"
DOI: 10.1177/0972150917693155
Abstract: This study’s main objective is to explore the antecedents of consumer switching behaviour in the context of mobile industry. At the same time, this study gives a closer focus on the roles that brand personality…
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Keywords:
switching behaviour;
perceived product;
product quality;
brand ... See more keywords