Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-019-02598-x
Abstract: The resistive switching random access memory (RRAM) device has received a great interest for the next-generation non-volatile memory application, and resistive switching (RS) characteristics are mainly affected by conductive oxygen vacancies ([ V o ยทยท… read more here.
Keywords: atomic layer; switching characteristics; thermal annealing; resistive switching ... See more keywords
Imprint phenomenon of ferroelectric switching characteristics in BaTiO3/PbTiO3 multilayer thin films
Sign Up to like & getrecommendations! Published in 2022 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2021.162088
Abstract: Abstract Materials in which ferroelectric polarization can be locally controlled have potential for high-density information storage applications. Herein, we investigated the ferroelectric polarization switching characteristics of epitaxial BaTiO3/PbTiO3 (BTO/PTO) multilayer thin films by using piezoresponse… read more here.
Keywords: imprint phenomenon; switching characteristics; multilayer thin; batio3 pbtio3 ... See more keywords
Domain switching characteristics of lead zirconate titanate piezoelectric ceramics on a nanoscopic scale
Sign Up to like & getrecommendations! Published in 2017 at "Journal of The European Ceramic Society"
DOI: 10.1016/j.jeurceramsoc.2016.07.034
Abstract: Abstract Domain switching characteristics of lead zirconate titanate ceramics with and without poling under compressive loading are investigated using electron backscatter diffraction. For loading in the poling direction, the switching strain is stronger than that… read more here.
Keywords: zirconate titanate; characteristics lead; switching characteristics; lead zirconate ... See more keywords
Bipolar resistive switching characteristics of a sol-gel InZnO oxide semiconductor
Sign Up to like & getrecommendations! Published in 2019 at "Physica B: Condensed Matter"
DOI: 10.1016/j.physb.2019.02.048
Abstract: Abstract This paper investigates the bipolar resistive switching characteristics of a sol-gel Ga-free InZnO (IZO) oxide semiconductor. Resistive random-access memories (RRAMs) using IZO films as the resistive switching layers are fabricated. The effects of the… read more here.
Keywords: sol gel; bipolar resistive; switching characteristics; resistive switching ... See more keywords
Ag:SiO xN y-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.8b12385
Abstract: We fabricate a Pt/Ag:SiO xN y/Ti programmable metallization cell exhibiting bidirectional threshold switching (TS) or nonvolatile resistive switching (RS) characteristics through a simple thermal annealing process. The cell composed of pristine Ag:SiO xN y layers… read more here.
Keywords: sio based; threshold switching; switching characteristics; self limiting ... See more keywords
On the universality of the I-V switching characteristics in non-volatile and volatile resistive switching oxides.
Sign Up to like & getrecommendations! Published in 2019 at "Faraday discussions"
DOI: 10.1039/c8fd00116b
Abstract: The I-V switching curves of bipolar switching non-volatile ReRAM devices show peculiar characteristics, such as an abrupt ON switching and the existence of a universal switching voltage. This switching behavior has been explained by the… read more here.
Keywords: non volatile; volatile resistive; universality switching; switching characteristics ... See more keywords
Thermal transport in metal-NbOx-metal cross-point devices and its effect on threshold switching characteristics.
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale"
DOI: 10.1039/d3nr00173c
Abstract: Volatile threshold switching and current-controlled negative differential resistance (NDR) in metal-oxide-metal (MOM) devices result from thermally driven conductivity changes induced by local Joule heating and are therefore influenced by the thermal properties of the device-structure.… read more here.
Keywords: effect; point devices; threshold switching; metal ... See more keywords
Studies on dielectric, optical, magnetic, magnetic domain structure, and resistance switching characteristics of highly c-axis oriented NZFO thin films
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Applied Physics"
DOI: 10.1063/1.4994312
Abstract: With the rapid development of new device miniaturization technology, there is invigorated interest in magnetic nanostructures for potential application in novel multifunctional devices. In continuation to our search for a suitable magnetic material having Curie… read more here.
Keywords: thin films; domain structure; switching characteristics; resistance switching ... See more keywords
Analog switching characteristics in TiW/Al2O3/Ta2O5/Ta RRAM devices
Sign Up to like & getrecommendations! Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5100075
Abstract: In this letter, we report analog switching characteristics in an analog resistive random access memory device based on a TiW/Al2O3/Ta2O5/Ta stack. For this device, both oxides were grown by using an atomic layer deposition system… read more here.
Keywords: al2o3 ta2o5; switching characteristics; analog switching; tiw al2o3 ... See more keywords
Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.3032188
Abstract: In this study, we demonstrate both of digital and analog memory operations in InGaZnO (IGZO) memristor devices by controlling the electrode materials for neuromorphic application. The switching properties of the devices are determined by the… read more here.
Keywords: neuromorphic system; switching characteristics; electrode; digital analog ... See more keywords
Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3034898
Abstract: A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the… read more here.
Keywords: switching characteristics; buffer insulated; gate; surface buffer ... See more keywords