Effect of electrode interfaces on peak-drift switching current of PZT thin films
Sign Up to like & getrecommendations! Published in 2019 at "Ceramics International"
DOI: 10.1016/j.ceramint.2018.10.217
Abstract: Abstract In this study, we investigated the impact of electrodes on the structural, crystal orientation, and electrical characteristics of lead zirconate titanate [Pb(Zr0.52Ti0.48)O3, PZT] thin films, that were deposited on Pt, Au, and LaNiO3 (LNO)… read more here.
Keywords: thin films; voltage; switching current; pzt ... See more keywords
Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4984296
Abstract: We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing)… read more here.
Keywords: switching current; tips pentacene; thin film; current transients ... See more keywords
Switching current of the domain ensemble with serrated charged walls
Sign Up to like & getrecommendations! Published in 2020 at "Ferroelectrics"
DOI: 10.1080/00150193.2020.1722885
Abstract: Abstract The time dependence of the switching current induced by the evolution of the statistical ensemble of cone-like domains in uniaxial ferroelectric is analyzed within modified Kolmogorov-Mehl-Johnson-Avrami (KMJA) theory. Proposed approach allows establishing the peculiarities… read more here.
Keywords: domain ensemble; switching current; current domain; serrated charged ... See more keywords
A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2017.2749249
Abstract: Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their excellent switching performance. To maximize the performance of GaN devices, it is necessary to study the switching characteristics, which requires measuring the… read more here.
Keywords: fast gan; switching current; current measurement; gan devices ... See more keywords