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Published in 2022 at "Micromachines"
DOI: 10.3390/mi13091498
Abstract: In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices.…
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Keywords:
functional theory;
switching density;
theory calculations;
memristive switching ... See more keywords