Schottky diode based resistive switching device based on ZnO/PEDOT:PSS heterojunction to reduce sneak current problem
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-019-00753-y
Abstract: To realize an asymmetric function blockable sneak currents in the resistive switching memory device, we propose a novel schottky diode based high charge density resistive switching device based on zinc oxide (ZnO) and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate… read more here.
Keywords: schottky diode; heterojunction; sneak current; resistive switching ... See more keywords
Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.
Sign Up to like & getrecommendations! Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b07549
Abstract: In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (105), excellent cyclic endurance (>103), and long retention time… read more here.
Keywords: atomic switching; device; pvp pmf; switching device ... See more keywords
Fault Prediction Model of High-Power Switching Device in Urban Railway Traction Converter with Bi-Directional Fatigue Data and Weighted LSM
Sign Up to like & getrecommendations! Published in 2019 at "Applied Sciences"
DOI: 10.3390/app9030444
Abstract: The switching device is relatively weakest in the traction converter, and this paper aims at the fault prediction of it. Firstly, the mathematical distribution is analyzed based on the results that were obtained in electro… read more here.
Keywords: fatigue; traction converter; model; switching device ... See more keywords