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Published in 2020 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202000799
Abstract: Resistive switching (RS) devices have evolved as one of the most promising candidates in the memory filed due to their excellent endurance and retention, fast switching speed, and extra‐high storage density capability. However, the coexistence…
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Keywords:
perovskite;
free inorganic;
resistive switching;
lead free ... See more keywords
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Published in 2018 at "Applied Surface Science"
DOI: 10.1016/j.apsusc.2018.06.001
Abstract: Abstract It is widely accepted that resistive switching devices (RSDs) are extremely appealing as active components in computer memories and logic gates in electronics, directly enabling neuromorphic functionalities. The aim of this study is to…
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Keywords:
silver nanoparticles;
situ generation;
generation;
switching devices ... See more keywords
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Published in 2023 at "Nano letters"
DOI: 10.1021/acs.nanolett.3c00327
Abstract: Threshold switches based on conductive metal bridge devices are useful as selectors to block sneak leakage paths in memristor arrays used in neuromorphic computing and emerging nonvolatile memory. We demonstrate that control of Ag-cation concentration…
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Keywords:
threshold;
switching devices;
control;
threshold switching ... See more keywords
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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c03364
Abstract: Resistive switching (RS) devices with binary and analogue operation are expected to play a key role in the hardware implementation of artificial neural networks. However, state of the art RS devices based on binary oxides…
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Keywords:
hfo2;
switching devices;
taox;
resistive switching ... See more keywords
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Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b01656
Abstract: Fluorescent light modulation by small electric potentials has gained huge interest in the past few years. This phenomenon, called electrofluorochromism, is of the utmost importance for applications in optoelectronic devices. Huge efforts are being addressed…
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Keywords:
fluorene;
electrofluorochromic switching;
devices using;
switching devices ... See more keywords
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Published in 2021 at "Nature Communications"
DOI: 10.1038/s41467-021-26399-1
Abstract: The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory,…
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Keywords:
emerging tellurium;
new opportunity;
switching devices;
opportunity emerging ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0020501
Abstract: Applications in neuromorphic computing and next-generation memories require a deep understanding of the physical mechanisms in resistive switching (RS) devices. Here, we report electrode-induced polarity conversion in Nb2O5/NbOx RS devices, where Nb2O5 and NbOx are…
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Keywords:
polarity conversion;
resistive switching;
switching devices;
nb2o5 nbox ... See more keywords
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Published in 2019 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab1da3
Abstract: In this work the I–V characteristics of a niobium oxide-based threshold switching device were optimized to match the requirements for its application in neuromorphic circuits. Those neuromorphic circuits rely on coupled oscillators utilizing the volatile…
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Keywords:
threshold switching;
switching devices;
improvement nbo;
based threshold ... See more keywords
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Published in 2022 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2021.3076705
Abstract: This article makes the comparisons on the behaviors of three types of commercial GaN power switching devices, including Schottky gate p-GaN high electron mobility transistor (HEMT), ohmic gate p-GaN HEMT with hybrid drain, and Cascode…
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Keywords:
switching devices;
power;
inductive switching;
gan ... See more keywords
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Published in 2021 at "Bulletin of the Chemical Society of Japan"
DOI: 10.1246/bcsj.20210318
Abstract: By using poly {[9,9-dioctyl-9H-fluorene] -alt- (1,1,2,2- tetra- phenylethene)} (POFTPE) as an electron donor, and Y6 (or C60) as electron acceptor, solution-processed bulk heterojunction optoelectr...
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Keywords:
bulk heterojunction;
switching devices;
acceptor;
heterojunction optoelectrical ... See more keywords
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Published in 2022 at "Frontiers in Neuroscience"
DOI: 10.3389/fnins.2021.786694
Abstract: Inspired by the human brain, the spike-based neuromorphic system has attracted strong research enthusiasm because of the high energy efficiency and powerful computational capability, in which the spiking neurons and plastic synapses are two fundamental…
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Keywords:
engineering spiking;
neurons using;
based neurons;
switching devices ... See more keywords