Improvement of sensing margin and reset switching fail of RRAM
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DOI: 10.1016/j.sse.2019.02.010
Abstract: Abstract To develop a high voltage read margin ΔVrd, deep reset engineering and defect engineering are proposed. To realize the defect engineering, the amount of oxygen vacancy of the resistor was controlled by optimizing the… read more here.
Keywords: reset switching; margin; engineering; switching fail ... See more keywords