Threshold Switching in Forming-Free Anodic Memristors Grown on Hf–Nb Combinatorial Thin-Film Alloys
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DOI: 10.3390/nano12223944
Abstract: The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf–Nb… read more here.
Keywords: memristors grown; forming free; switching forming; threshold switching ... See more keywords