Interface‐Modulated Resistive Switching in Mo‐Irradiated ReS2 for Neuromorphic Computing
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DOI: 10.1002/adma.202202722
Abstract: Coupling charge impurity scattering effects and charge‐carrier modulation by doping can offer intriguing opportunities for atomic‐level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here… read more here.
Keywords: interface modulated; resistive switching; modulated resistive; switching irradiated ... See more keywords