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Published in 2017 at "Advanced electronic materials"
DOI: 10.1002/aelm.201700294
Abstract: Ionic transport greatly influences the switching kinetics of filamentary resistive switching memories and depends strongly on temperature and electric fields. To separate the impact of both parameters on the switching kinetics and to further deepen…
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Keywords:
high temperatures;
switching kinetics;
impact high;
investigation impact ... See more keywords
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Published in 2017 at "Organic Electronics"
DOI: 10.1016/j.orgel.2016.11.005
Abstract: Abstract We demonstrate polarization switching kinetics of poly(vinylidene fluoride-ran-trifluoroethylene) P(VDF-TrFE) nanodots depending on their sizes. Ferroelectric copolymer P(VDF-TrFE) nanodots, ranging from 20 to 250 nm in lateral size, were deposited on a Nb-doped SrTiO3 substrate by…
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Keywords:
polarization switching;
vdf trfe;
switching kinetics;
polarization ... See more keywords
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Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12234126
Abstract: Ferroelectric polycrystalline HfO2 thin films are the most promising material for the implementation of novel non-volatile ferroelectric memories because of their attractive properties, such as compatibility with modern Si technology, perfect scalability, low power consumption…
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Keywords:
polarization switching;
switching kinetics;
model;
hzo ... See more keywords