Articles with "switching loss" as a keyword



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Self-oscillating current-fed inverter with low switching loss for wireless power transfer

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Published in 2017 at "Electronics Letters"

DOI: 10.1049/el.2017.0760

Abstract: A zero-voltage switching topology for self-oscillating current-fed resonant inverter for wireless power transfer application is proposed. The drawback of conventional floating-capacitor connection between two differential MOSFET outputs is revealed. It turns out that the conventional… read more here.

Keywords: self oscillating; current fed; wireless power; oscillating current ... See more keywords
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An Improved Phase-Shifted DPWM Method for Reducing Switching Loss and Thermal Balancing in Cascaded H-Bridge Multilevel Inverter

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Published in 2020 at "IEEE Access"

DOI: 10.1109/access.2020.3030261

Abstract: This paper proposes an improved discontinuous pulse-width modulation (DPWM) method based on phase-shifted PWM (PS-PWM) for three-phase cascaded H-bridge (CHB) multilevel inverters. Due to the CHB multilevel inverters employ a large number of power semiconductor… read more here.

Keywords: switching loss; multilevel; loss; inverter ... See more keywords
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Advanced DPWM Method for Switching Loss Reduction in Isolated DC Type Dual Inverter With Open-End Winding IPMSM

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Published in 2023 at "IEEE Access"

DOI: 10.1109/access.2023.3234296

Abstract: This paper proposes an advanced discontinuous pulse-width modulation (DPWM) scheme for a dual inverter to reduce switching loss. A dual inverter is used to drive an open-end winding interior permanent magnet synchronous motor (OEW-IPMSM). It… read more here.

Keywords: open end; dpwm scheme; loss; switching loss ... See more keywords
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Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism

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Published in 2021 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2020.3036325

Abstract: In this article, a dynamic charge storage mechanism is proposed for designing the p-GaN gate dynamic charge storage high-electron-mobility transistor (DCS-HEMT) with ultralow switching loss. The device features a p-doped DCS layer in AlGaN buffer.… read more here.

Keywords: switching loss; tex math; hemt; loss ... See more keywords
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High Step-Up Quasi-Resonant Converter Featuring Minimized Switching Loss Over Wide Input Voltage Range

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Published in 2021 at "IEEE Transactions on Industrial Electronics"

DOI: 10.1109/tie.2020.3032916

Abstract: This article proposes a high step-up quasi-resonant converter that minimizes switching loss over a wide range of input voltages. By employing a bidirectional switch and corresponding switching modulation, the proposed converter achieves the main switch… read more here.

Keywords: range; input; high step; converter ... See more keywords
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Hybrid Modulation Scheme for Switching Loss Reduction in a Modular Multilevel High-Voltage Direct Current Converter

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Published in 2019 at "IEEE Transactions on Power Electronics"

DOI: 10.1109/tpel.2018.2848620

Abstract: A modular multilevel converter (MMC) is regarded as a promising topology in high-voltage direct current systems. However, the MMC consists of numerous submodules (SMs) and switching devices, which lead to a considerable switching loss, and… read more here.

Keywords: switching loss; voltage; scheme; modulation ... See more keywords
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Thermal Impedance Calibration for Rapid and Noninvasive Calorimetric Soft-Switching Loss Characterization

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Published in 2023 at "IEEE Transactions on Power Electronics"

DOI: 10.1109/tpel.2023.3267982

Abstract: Virtual prototyping, multiobjective optimization, and design automation are increasingly being used to meet the growing demands of modern power electronic applications in terms of efficiency and power density. These concepts are based on accurate loss… read more here.

Keywords: soft switching; inline formula; switching loss; tex math ... See more keywords
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SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

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Published in 2022 at "Micromachines"

DOI: 10.3390/mi13020248

Abstract: A novel Silicon-Carbide heterojunction U-MOSFET embedded a P-type pillar buried in the drift layer (BP-TMOS) is proposed and simulated in this study. When functioning in the on state, the merged heterojunction structure will control the… read more here.

Keywords: mosfet; gate; switching loss; heterojunction ... See more keywords