Room‐Temperature‐Processable Highly Reliable Resistive Switching Memory with Reconfigurability for Neuromorphic Computing and Ultrasonic Tissue Classification
Sign Up to like & getrecommendations! Published in 2023 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202213064
Abstract: Reversible metal‐filamentary mechanism has been widely investigated to design an analog resistive switching memory (RSM) for neuromorphic hardware‐implementation. However, uncontrollable filament‐formation, inducing its reliability issues, has been a fundamental challenge. Here, an analog RSM with… read more here.
Keywords: resistive switching; switching memory; tissue classification;
Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-020-03753-5
Abstract: A switching memory device based on functionalized gold nanoparticles (AuNPs) and hexagonal copper sulfide nanocrystals (CuS), finely blended in polymethylmethacrylate matrix (PMMA), is herein presented. A two-electrode sandwich architecture has been implemented using aluminum top… read more here.
Keywords: cus; memory; gold nanoparticles; nanoparticles functionalized ... See more keywords
Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2016.10.008
Abstract: Abstract Resistive random access memory (RRAM) has been developing as a most promising non-volatile memory in the current memory technology. In this work, ZnFe 2 O 4 (ZFO) nano powder were firstly prepared by co-precipitation… read more here.
Keywords: ions assisted; memory; resistive switching; memory behaviors ... See more keywords
Annealing effect on the bipolar resistive switching memory of NiZn ferrite films
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2018.11.345
Abstract: Abstract A detailed understanding of the resistive switching behaviors and relevant physical mechanism is key to controlling nonvolatile memory devices. Pt/Ni0.5Zn0.5Fe2O4/Pt was synthesized by radio frequency magnetron sputtering method at room temperature. The typical bipolar… read more here.
Keywords: switching memory; bipolar resistive; memory; resistive switching ... See more keywords
A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate.
Sign Up to like & getrecommendations! Published in 2018 at "Journal of colloid and interface science"
DOI: 10.1016/j.jcis.2018.03.001
Abstract: In this work, a flexible resistive switching memory device based on ZnO film was fabricated using a foldable Polyethylene terephthalate (PET) film as substrate while Ag and Ti acts top and bottom electrode. Our as-prepared… read more here.
Keywords: memory; switching memory; film; based zno ... See more keywords
Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction
Sign Up to like & getrecommendations! Published in 2019 at "Results in Physics"
DOI: 10.1016/j.rinp.2019.102308
Abstract: Abstract With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on… read more here.
Keywords: based bifeo3; switching memory; memory; resistive switching ... See more keywords
HfO2-based resistive switching memory with CNTs electrode for high density storage
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.03.004
Abstract: Abstract In this paper, the HfO 2 -based resistive switching memory (RRAM) using carbon nanotubes (CNTs) as contact electrodes for high density integration is demonstrated. The Al/HfO 2 /CNTs devices show self-compliance, forming-free and low… read more here.
Keywords: resistive switching; cnts electrode; high density; based resistive ... See more keywords
Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
Sign Up to like & getrecommendations! Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-68211-y
Abstract: We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on… read more here.
Keywords: switching mode; based resistive; switching memory; resistive switching ... See more keywords
Switching the memory behaviour from binary to ternary by triggering S62- relaxation in polysulfide-bearing zinc-organic complex molecular memories.
Sign Up to like & getrecommendations! Published in 2023 at "Materials horizons"
DOI: 10.1039/d3mh00037k
Abstract: The use of crystalline metal-organic complexes with definite structures as multilevel memories can enable explicit structure-property correlations, which is significant for designing the next generation of memories. Here, four Zn-polysulfide complexes with different degrees of… read more here.
Keywords: switching memory; memory behaviour; s62 relaxation; relaxation ... See more keywords
Improved performance of Ta2O5−x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5002571
Abstract: Resistive-switching memory with ultralow-power consumption is very promising technology for next-generation data storage and high-energy-efficiency neurosynaptic chips. Herein, Ta2O5−x-based multilevel memories with ultralow-power consumption and good data retention were achieved by simple Gd-doping. The introduction… read more here.
Keywords: memory; resistive switching; ultralow power; retention ... See more keywords
A resistive switching memory device with a negative differential resistance at room temperature
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5037191
Abstract: In this study, large-area ZnO nanorod arrays covering a Zn foil substrate were produced by a low-cost and low temperature approach. In this approach, oxidation of zinc metal was achieved in a formamide/water mixture. Taking… read more here.
Keywords: temperature; resistive switching; negative differential; resistance ... See more keywords